IKB15N60T Datasheet, PDF (1/13 Pages) Infineon Technologies AG – IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

TrenchStop Series
IKB15N60T
q
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Very low V_CE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V_CE(sat)
• Positive temperature coefficient in V_CE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
V_CE
I_C
V_{CE(sat),Tj=25°C}
T_j,max
Marking Code
IKB15N60T 600V 15A
1.5V
175°C
K15T60
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area (V_CE ≤ 600V, T_j ≤ 175°C)
Diode forward current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time¹⁾
V_GE = 15V, V_CC ≤ 400V, T_j ≤ 150°C
Power dissipation T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
-
Package Ordering Code
TO-263 Q67040S4712
Value
Unit
600
V
A
30
15
45
45
15
30
45
±20
V
5
µs
130
W
-40...+175
°C
-55...+175
260
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.1 Dec-04