IKA03N120H2 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

IKA03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
• Designed for:
C
- TV – Horizontal Line Deflection
• 2^nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Integrated anti-parallel diode
- E_off optimized for I_C =3A
G
E
P-TO220-3-31
(FullPAK)
P-TO220-3-34
(FullPAK)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKA03N120H2
IKA03N120H2
V_CE
I_C
1200V 3A
1200V 3A
E_off
0.15mJ
0.15mJ
T_j
150°C
150°C
Marking
Package Ordering Code
K03H1202 P-TO-220-3-31 Q67040-S4649
K03H1202 P-TO-220-3-34 Q67040-S4655
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector peak current (V_GE = 15V)
T_C = 100°C, f = 32kHz
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Diode forward current
T_C = 25°C
T_C = 100°C
Gate-emitter voltage
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
V_CE
I_C
I_Cpuls
-
I_F
V_GE
P_tot
T_j , T_stg
-
Value
Unit
1200
V
A
8.2
9
9
9.6
3.9
±20
V
29
W
-40...+150
°C
260
Power Semiconductors
1
Mar-04, Rev. 2