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IHY30N160R2 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode | |||
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IHY30N160R2
Soft Switching Series
TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode
Features:
⢠Powerful monolithic body diode with very low forward voltage
⢠Body diode clamps negative voltages
⢠Trench and fieldstop technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
⢠NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
⢠Low EMI
⢠New TO-247HC package offers increased air & creepage
distances compared to TO247 package
⢠Qualified according to JEDEC1 for target applications
⢠Pb-free lead plating; RoHS compliant
⢠Halogen free (according to IEC 61249-2-21)
⢠Complete product spectrum and PSpice models:
http://www.infineon.com/igbt/
C
G
E
Applications:
⢠Inductive cooking
⢠Soft switching applications
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHY30N160R2
1600V 30A
1.8V
175°C H30R1602 PG-TO247HC-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ⤠1600V, Tj ⤠175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ⤠2.5µs, sine halfwave
TC = 100°C, tp ⤠2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 10 µs, D < 0.01)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
1600
V
A
60
30
90
90
60
30
90
50
130
120
±20
V
±25
312
W
-40...+175
°C
-55...+175
260
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.1 Nov. 09
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