|
IHW40T60_13 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – IGBT in TRENCHSTOP technology with soft, fast recovery anti-parallel Emitter Controlled HE diode | |||
|
TRENCHSTOP⢠Series
IHW40T60
q
Low Loss DuoPack : IGBT in TRENCHSTOP⢠technology with soft, fast recovery
anti-parallel Emitter Controlled HE diode
Features:
ï· Very low VCE(sat) 1.5V (typ.)
ï· Maximum junction temperature 175°C
ï· Short circuit withstand time 5ïs
ï· TRENCHSTOP⢠and fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCE(sat) and positive temperature coefficient
ï· Low EMI
ï· Low gate charge
ï· Qualified according to JEDEC1 for target applications
ï· Pb-free lead plating; RoHS compliant
ï· Complete product spectrum and PSpice models : http://www.infineon.com/igbt/
Applications:
ï· Inductive Cooking
ï· Soft & Hard Switching Applications
Type
IHW40T60
VCE
600V
IC
40A
VCE(sat),Tj=25°C
1.55V
Tj,max
175ï°C
Marking
H40T60B
C
G
E
PG-TO247-3
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ⥠25ï°C
DC collector current, limited by Tjmax
TC = 25ï°C
TC = 100ï°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175ï°C, tp = 1µs
Diode forward current, limited by Tjmax
TC = 25ï°C
TC = 100ï°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 10 µs, D<0.01)
Short circuit withstand time2)
VGE = 15V, VCC ï£ 400V, Tj ï£ 150ï°C
Power dissipation TC = 25ï°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Value
600
80
40
120
120
60
30
90
ï±20
ï±25
5
303
-40...+175
-55...+150
260
Unit
V
A
V
ïs
W
ï°C
Rev. 2.1 10.12.2013
|
▷ |