IHW40T60 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in TrenchStop-technology

TrenchStop^® Series
IHW40T60
q
Low Loss DuoPack : IGBT in TrenchStop^®-technology
with soft, fast recovery anti-parallel EmCon HE diode
Features:
C
• Very low V_CE(sat) 1.5 V (typ.)
• Maximum junction temperature 175 °C
• Short circuit withstand time – 5µs
• Trench and fieldstop technology for 600 V applications offers :
- very tight parameter distribution
G
E
- high ruggedness, temperature stable behavior
- low V_CE(sat) and positive temperature coefficient
• Low EMI
• Low gate charge
• Qualified according to JEDEC¹ for target applications
PG-TO-247-3
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice models : http://www.infineon.com/igbt/
Applications:
• Inductive Cooking
• Soft & Hard Switching Applications
Type
V_CE
I_C
V_{CE(sat),Tj=25°C} T_j,max
Marking
Package
IHW40T60
600V 40A
1.55V
175°C H40T60B PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area (V_CE ≤ 600V, T_j ≤ 175°C)
Diode forward current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Transient Gate-emitter voltage (t_p < 10 µs, D<0.01)
Short circuit withstand time²⁾
V_GE = 15V, V_CC ≤ 400V, T_j ≤ 150°C
Power dissipation T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
-
600
80
40
120
120
60
30
90
±20
±25
5
303
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.0 Sep. 08