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IHW30N60T_08 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Soft Switching Series | |||
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Soft Switching Series
IHW30N60T
q
Low Loss DuoPack : IGBT in TrenchStop® technology with optimised diode
Features:
C
⢠Very low VCE(sat) 1.5 V (typ.)
⢠Maximum Junction Temperature 175 °C
⢠Short circuit withstand time â 5µs
⢠TrenchStop® and Fieldstop technology for 600 V applications
G
E
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCE(sat)
⢠Positive temperature coefficient in VCE(sat)
⢠Low EMI
PG-TO-247-3
⢠Low Gate Charge
⢠Qualified according to JEDEC1 for target applications
⢠Pb-free lead plating; RoHS compliant
⢠Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
⢠Inductive Cooking
⢠Soft Switching Applications
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
IHW30N60T 600V 30A
1.5V
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ⤠600V, Tj ⤠175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Short circuit withstand time2)
VGE = 15V, VCC ⤠400V, Tj ⤠150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H30T60
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
Unit
600
V
A
60
30
90
90
23
13
30
±20
V
±25
5
µs
187
W
-40...+175
°C
-55...+175
260
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.2 Sep. 08
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