IHW30N60T Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in TrenchStop technology with optimised diode

Soft Switching Series
IHW30N60T
q
Low Loss DuoPack : IGBT in TrenchStop^® technology with optimised diode
Features:
C
• Very low V_CE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• TrenchStop^® and Fieldstop technology for 600 V applications
G
E
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low V_CE(sat)
• Positive temperature coefficient in V_CE(sat)
• Low EMI
PG-TO-247-3-21
• Low Gate Charge
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
• Inductive Cooking
• Soft Switching Applications
Type
V_CE
I_C
V_{CE(sat),Tj=25°C}
T_j,max
IHW30N60T 600V 30A
1.5V
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area (V_CE ≤ 600V, T_j ≤ 175°C)
Diode forward current
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Transient Gate-emitter voltage (t_p < 5 ms)
Short circuit withstand time²⁾
V_GE = 15V, V_CC ≤ 400V, T_j ≤ 150°C
Power dissipation T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H30T60
Symbol
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j
T_stg
-
Package
PG-TO-247-3-21
Value
Unit
600
V
A
60
30
90
90
23
13
30
±20
V
±25
5
µs
187
W
-40...+175
°C
-55...+175
260
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.1 Apr. 06