IHW30N120R2 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Reverse Conducting IGBT with monolithic body diode

IHW30N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V_CE(sat)
• Low EMI
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
• Inductive Cooking
• Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
V_CE
I_C
V_{CE(sat),Tj=25°C}
T_j,max
Marking
Package
IHW30N120R2
1200V 30A
1.65V
175°C H30R1202 PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area (V_CE ≤ 1200V, T_j ≤ 175°C)
Diode forward current
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Diode surge non repetitive current, t_p limited by T_jmax
T_C = 25°C, t_p = 10ms, sine halfwave
T_C = 25°C, t_p ≤ 2.5µs, sine halfwave
T_C = 100°C, t_p ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (t_p < 5 ms)
Power dissipation T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
I_FSM
V_GE
P_tot
T_j
T_stg
-
1200
V
A
60
30
90
90
60
30
90
50
130
120
±20
V
±25
390
W
-40...+175
°C
-55...+175
260
1 _{J-STD-020 and JESD-022}
Power Semiconductors
1
Rev. 1.2 May 06