IHW30N100T_08 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Soft Switching Series

Soft Switching Series
IHW30N100T
q
Low Loss DuoPack : IGBT in TrenchStop^®and Fieldstop technology
with anti-parallel diode
Features:
C
• 1.1V Forward voltage of antiparallel rectifier diode
• Specified for T_Jmax = 175°C
• TrenchStop^® and Fieldstop technology for 1000 V applications
offers :
G
E
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in V_CE(sat)
• Low EMI
• Qualified according to JEDEC¹ for target applications
PG-TO-247-3
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
Applications:
• Microwave Oven
• Soft Switching Applications
Type
V_CE
I_C
V_{CE(sat),Tj=25°C}
T_j,max Marking
IHW30N100T 1000V 30A
1.55V
175°C H30T100
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area V_CE ≤ 1000V, T_j ≤ 175°C
Diode forward current
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Transient Gate-emitter voltage (t_p < 5 ms)
Power dissipation, T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
P_tot
T_j
T_stg
-
Package
PG-TO-247-3
Value
1000
60
30
90
90
22
12
36
±20
±25
412
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
°C
1 _{J-STD-020 and JESD-022}
Power Semiconductors
1
Rev. 2.7 Nov 08