IHW30N100R Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Reverse Conducting IGBT with monolithic body diode

Soft Switching Series
IHW30N100R
q
Reverse Conducting IGBT with monolithic body diode
Features:
• 1.5V Forward voltage of monolithic body Diode
• Full Current Rating of monolithic body Diode
• Specified for T_Jmax = 175°C
• Trench and Fieldstop technology for 1000 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in V_CE(sat)
• Low EMI
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant
Applications:
• Microwave Oven
• Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
V_CE
I_C
V_{CE(sat),Tj=25°C}
T_j,max Marking
Package
IHW30N100R 1000V 30A
1.5V
175°C H30R100 PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area V_CE ≤ 1200V, T_j ≤ 150°C
Diode forward current
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Transient Gate-emitter voltage (t_p < 5 ms)
Power dissipation, T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
P_tot
T_j
T_stg
-
1000
60
30
90
90
60
30
90
±20
±25
412
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
°C
1 _{J-STD-020 and JESD-022}
Power Semiconductors
1
Rev. 2 July 06