IHP10T120_07 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Soft Switching Series
IHP10T120
Low Loss DuoPack : IGBT in TrenchStop^® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Short circuit withstand time – 10µs
C
• Designed for :
- Soft Switching Applications
- Induction Heating
• TrenchStop^® and Fieldstop technology for 1200 V applications
G
E
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in V_CE(sat)
- Very low V_ce(sat)
• Very soft, fast recovery anti-parallel EmCon^™ HE diode
PG-TO-220-3-1
• Low EMI
• Qualified according to JEDEC¹ for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
Type
V_CE
I_C V_{CE(sat),Tj=25°C}
T_j,max
Marking
Package
IHP10T120 1200V 10A
1.7V
150°C H10T120 PG-TO-220-3-1
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Diode forward current
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax, T_c = 25°C
Diode surge non repetitive current, t_p limited by T_jmax
T_C = 25°C, t_p = 10ms, sine halfwave
T_C = 25°C, t_p ≤ 2.5µs, sine halfwave
T_C = 100°C, t_p ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Short circuit withstand time²⁾
V_GE = 15V, V_CC ≤ 1200V, T_j ≤ 150°C
Power dissipation, T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
I_FSM
V_GE
t_SC
P_tot
T_j
T_stg
-
1200
16
10
24
24
11
7
16.5
28
50
40
±20
10
138
-40...+150
-55...+150
260
Unit
V
A
A
V
µs
W
°C
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.4 Sept. 07