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IGW50N60T_15 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology | |||
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IGW50N60T
TRENCHSTOP⢠Series
Low Loss IGBT : IGBT in TRENCHSTOP⢠and Fieldstop technology
Features:
ï· Very low VCE(sat) 1.5V (typ.)
ï· Maximum Junction Temperature 175°C
ï· Short circuit withstand time 5ïs
ï· Designed for :
- Frequency Converters
- Uninterrupted Power Supply
ï· TRENCHSTOP⢠and Fieldstop technology for 600V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
ï· Positive temperature coefficient in VCE(sat)
ï· Low EMI
ï· Low Gate Charge
ï· Qualified according to JEDEC1 for target applications
ï· Pb-free lead plating; RoHS compliant
ï· Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO247-3
Type
IGW50N60T
VCE
600 V
IC
50 A
VCE(sat),Tj=25°C Tj,max
1.5 V
175 ï°C
Marking
G50T60
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ⥠25ï°C
DC collector current, limited by Tjmax
TC = 25ï°C, value limited by bondwire
TC = 100ï°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175ï°C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC ï£ 400V, Tj ï£ 150ï°C
Power dissipation TC = 25ï°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
Unit
600
V
90
64
A
150
150
ï±20
V
5
ïs
333
W
-40...+175
-55...+150
ï°C
260
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.8 19.05.2015
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