IGW25T120_09 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Low Loss IGBT in TrenchStop® and Fieldstop technology

TrenchStop^® Series
IGW25T120
Low Loss IGBT in TrenchStop^® and Fieldstop technology
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop^® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V_CE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
V_CE
I_C
V_{CE(sat),Tj=25°C} T_j,max
Marking
IGW25T120 1200V 25A
1.7V
150°C G25T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Gate-emitter voltage
Short circuit withstand time²⁾
V_GE = 15V, V_CC ≤ 1200V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V_CE
I_C
I_Cpuls
-
V_GE
t_SC
P_tot
T_j
T_stg
-
Package
PG-TO-247-3
Value
1200
50
25
75
75
±20
10
190
-40...+150
-55...+150
260
Unit
V
A
V
µs
W
°C
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.4 Nov. 09