IGU04N60T_16 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Low Loss IGBT : IGBT in TRENCHSTOP™ technology

IGU04N60T
TRENCHSTOP™ Series
q
Low Loss IGBT : IGBT in TRENCHSTOP™ technology
C
 Very low VCE(sat) 1.5 V (typ.)
 Maximum Junction Temperature 175°C
 Short circuit withstand time 5s
 Designed for :
- frequency inverters
- drives
 TRENCHSTOP™ technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
 Positive temperature coefficient in VCE(sat)
 Low EMI
 Low Gate Charge
Qualified according to JEDEC¹ for target applications
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IGU04N60T
V_CE
600 V
I_C
V_{CE(sat),Tj=25°C} T_j,max
4A
1.5 V
175 C
Marking
G04T60
G
E
PG-TO251-3
Package
PG-TO251-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by T_jmax
T_C = 25C
T_C = 100C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area (V_CE  600V, T_j  175C)
Gate-emitter voltage
Short circuit withstand time²⁾
V_GE = 15V, V_CC  400V, T_j  150C
Power dissipation T_C = 25C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering, 1.6mm (0.063 in.) from case for 10s.
Symbol
V_CE
I_C
I_Cpuls
-
V_GE
t_SC
P_tot
T_j
T_stg
T_s
Value
Unit
600
V
9.5
6.5
A
12
12
20
V
5
s
42
W
-40...+175
C
-55...+150
260
C
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
IFAG IPC TD VLS
1
Rev. 2.1 17.02.2016