IGP01N120H2_07 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – HighSpeed 2-Technology

IGP01N120H2
IGD01N120H2
HighSpeed 2-Technology
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2^nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- E_off optimized for I_C =1A
PG-TO-220-3-1
• Qualified according to JEDEC² for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-252-3-1
Type
IGP01N120H2
IGD01N120H2
V_CE
I_C
E_off
T_j
1200V 1A 0.09mJ 150°C
1200V 1A 0.09mJ 150°C
Marking
G01H1202
G01H1202
Package
PG-TO-220-3-1
PG-TO-252-3-11
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
T_C = 25°C, f = 140kHz
T_C = 100°C, f = 140kHz
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Gate-emitter voltage
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Soldering temperature
PG-TO-252: Reflow soldering, MSL3
Others: wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
V_CE
I_C
I_Cpuls
-
V_GE
P_tot
T_j , T_stg
-
Value
Unit
1200
V
A
3.2
1.3
3.5
3.5
±20
V
28
W
-40...+150
°C
260
260
2 _{J-STD-020 and JESD-022}
Power Semiconductors
1
Rev. 2.4 Sept. 07