IGC99T120T6RH Datasheet, PDF (1/5 Pages) Infineon Technologies AG – IGBT4 High Power Chip

IGC99T120T6RH
IGBT4 High Power Chip
FEATURES:
• 1200V Trench + Field Stop technology
• low VCE(sat)
• soft turn off
• positive temperature coefficient
• easy paralleling
This chip is used for:
• medium / high power modules
Applications:
• medium / high power drives
C
G
E
Chip Type
V_CE
I_Cn
Die Size
IGC99T120T6RH 1200V 100A 10.39 x 9.5 mm²
Package
sawn on foil
MECHANICAL PARAMETER
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
10.39 x 9.5
7.987 x 8.923
1.31 x 0.811
mm ²
98.7 / 76.1
140
µm
150
mm
90
grd
140
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7683 A, Edition 0.9 , 24.11.2006