IGC168T170S8RH Datasheet, PDF (1/5 Pages) Infineon Technologies AG – low switching losses and saturation losses

IGC168T170S8RH
IGBT3 Power Chip
Features:
 1700V Trench + Field stop technology
 low switching losses and saturation losses
 soft turn off
 positive temperature coefficient
 easy paralleling
This chip is used for:
 power modules
Applications:
 drives
Chip Type
V_CE
I_C
Die Size
IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm²
C
G
E
Package
sawn on foil
Mechanical Parameters
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
13.38 x 12.58
11.159 x 10.353
1.674 x 0.899
mm²
168.3
190
µm
200
mm
142
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
Electrically conductive glue or solder
Wire bond
Reject ink dot size
for original and
sealed MBB bags
Storage environment
for open MBB bags
Al, <500µm
 0.65mm ; max 1.2mm
Ambient atmosphere air, Temperature 17°C – 25°C,
< 6 month
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,
Humidity <25%RH, Temperature 17°C – 25°C, < 6 month
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793N, L7793U, L7793F, Rev 0.9, 27.06.2014