IGC136T170S8RH2 Datasheet, PDF (1/5 Pages) Infineon Technologies AG – low switching losses and saturation losses

IGC136T170S8RH2
IGBT3 Power Chip
Features:
 1700V Trench & Field stop technology
 low switching losses and saturation losses
 soft turn off
 positive temperature coefficient
 easy paralleling
 Qualified according to JEDEC for target
applications
Recommended for:
 power modules
Applications:
 drives
C
G
E
Chip Type
V_CE
I_Cn^{1 )}
Die Size
Package
IGC136T170S8RH2 1700V 117.5A 17.72 x 7.7 mm²
sawn on foil
1 ) _{nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization}
Mechanical Parameters
Die size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
17.72 x 7.7
See chip drawing
1.674 x 0.899
136.4
190
200
187
Photoimide
3200 nm AlSiCu
Ni Ag –system
mm²
µm
mm
Die bond
Electrically conductive epoxy glue and soft solder
Wire bond
Reject ink dot size
for original and
sealed MBB bags
Storage environment
for open MBB bags
Al, <500µm
 0.65mm ; max 1.2mm
Ambient atmosphere air, Temperature 17°C – 25°C,
< 6 month
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,
Humidity <25%RH, Temperature 17°C – 25°C, < 6 month
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7804N, L7804U, L7804F, Edition 1.1, 27.06.2014