IGC11T120T6L Datasheet, PDF (1/5 Pages) Infineon Technologies AG – IGBT4 Low Power Chip

IGC11T120T6L
IGBT4 Low Power Chip
FEATURES:
• 1200V Trench + Field Stop technology
• low switching losses
• positive temperature coefficient
• easy paralleling
This chip is used for:
• low / medium power modules
Applications:
• low / medium power drives
C
G
E
Chip Type
IGC11T120T6L
V_CE
I_Cn
1200V 8A
Die Size
3.48 x 3.19 mm²
Package
sawn on foil
MECHANICAL PARAMETER
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
3.48 x 3.19
1.965 x 1.716
0.608 x 0.608
mm ²
11.1 / 5.5
115
µm
150
mm
0
grd
1353
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7613C, Edition 1, 31.10.2007