IGC114T170S8RM Datasheet, PDF (1/5 Pages) Infineon Technologies AG – low switching losses

IGC114T170S8RM
IGBT3 Power Chip
Features:
 1700V Trench + Field stop technology
 low switching losses
 soft turn off
 positive temperature coefficient
 easy paralleling
This chip is used for:
 power modules
Applications:
 drives
Chip Type
V_CE
I_C
Die Size
IGC114T170S8RM 1700V 100A 9.47 x 12.08 mm²
C
G
E
Package
sawn on foil
Mechanical Parameters
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
9.47 x 12.08
7.254 x 9.858
1.674 x 0.899
mm²
114.4
190
µm
200
mm
225
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7783O, L7783T, L7783E, Edition 0.9, 27.06.2014