IGC109T120T6RH Datasheet, PDF (1/5 Pages) Infineon Technologies AG – IGBT4 High Power Chip

IGC109T120T6RH
IGBT4 High Power Chip
Features:
• 1200V Trench + Field stop technology
• low VCE(sat)
• soft turn off
• positive temperature coefficient
• easy paralleling
This chip is used for:
• medium / high power modules
Applications:
• medium / high power drives
C
G
E
Chip Type
V_CE
I_Cn
Die Size
IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm²
Package
sawn on foil
MECHANICAL PARAMETER
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
7.48 x 14.61
4 x (2.761 x 6.458)
0.811 x 1.31
mm ²
109.3 / 82.6
140
µm
150
mm
90
grd
126
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
Store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7742 A, Edition 1, 31.10 .2007