IGB30N60T Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Low Loss IGBT in TrenchStop and Fieldstop technology

TrenchStop^® Series
IGB30N60T
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Low Loss IGBT in TrenchStop^® and Fieldstop technology
• Very low V_CE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterruptible Power Supply
• TrenchStop^®and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
• Positive temperature coefficient in V_CE(sat)
• Low EMI
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹ for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
P-TO-263-3-2
Type
IGB30N60T
V_CE
600V
I_C
30A
V_{CE(sat),Tj=25°C}
1.5V
T_j,max
175°C
Marking Code
G30T60
Package
P-TO-263-3-2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by T_jmax
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area (V_CE ≤ 600V, T_j ≤ 175°C)
Gate-emitter voltage
Short circuit withstand time²⁾
V_GE = 15V, V_CC ≤ 400V, T_j ≤ 150°C
Power dissipation T_C = 25°C
Operating junction temperature
Storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
V_CE
I_C
I_Cpuls
-
V_GE
t_SC
P_tot
T_j
T_stg
-
Value
Unit
600
V
A
60
30
90
90
±20
V
5
µs
187
W
-40...+175
°C
-55...+175
220
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.1 June 06