IGB01N120H2 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – HighSpeed 2-Technology

IGP01N120H2,
IGD01N120H2
IGB01N120H2
HighSpeed 2-Technology
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2^nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- E_off optimized for I_C =1A
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
P-TO-252-3-1 (D-PAK)
(TO-252AA)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V_CE
I_C
E_off
T_j
Package
Ordering Code
IGP01N120H2 1200V 1A 0.09mJ 150°C P-TO-220-3-1
Q67040-S4593
IGB01N120H2 1200V 1A 0.09mJ 150°C P-TO-263 (D²PAK) Q67040-S4592
IGD01N120H2 1200V 1A 0.09mJ 150°C P-TO-252 (DPAK) Q67040-S4591
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
T_C = 25°C, f = 140kHz
T_C = 100°C, f = 140kHz
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Gate-emitter voltage
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
V_CE
I_C
I_Cpuls
-
V_GE
P_tot
T_j , T_stg
-
Value
Unit
1200
V
A
3.2
1.3
3.5
3.5
±20
V
28
W
-40...+150
°C
260
225 (for SMD)
Power Semiconductors
1
Rev. 2, Mar-04