IGA03N120H2 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – HighSpeed 2-Technology

IGA03N120H2
HighSpeed 2-Technology
• Designed for:
- TV – Horizontal Line Deflection
• 2^nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- E_off optimized for I_C =3A
- simple Gate-Control
C
G
E
P-TO220-3-31
(FullPAK)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO220-3-34
(FullPAK)
Type
V_CE
I_C
E_off
T_j,max
Marking
Package
Ordering Code
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-31 Q67040-S4648
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-34 Q67040-S4654
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector peak current (V_GS = 15V)
T_C = 100°C, f = 32kHz
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Gate-emitter voltage
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
V_CE
I_Cpk
I_Cpuls
-
V_GE
P_tot
T_j , T_stg
-
Value
Unit
1200
V
A
8.2
9
9
±20
V
29
W
-40...+150
°C
260
Power Semiconductors
1
Mar-04, Rev. 2.0