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IDT12S60C_08 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – 2nd Generation thinQ SiC Schottky Diode | |||
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2nd Generation thinQ!TM SiC Schottky Diode
Features
⢠Revolutionary semiconductor material - Silicon Carbide
⢠Switching behavior benchmark
⢠No reverse recovery/ No forward recovery
⢠No temperature influence on the switching behavior
⢠High surge current capability
⢠Pb-free lead plating; RoHS compliant
⢠Qualified according to JEDEC1) for target applications
⢠Breakdown voltage tested at 5mA2)
Product Summary
V DC
Qc
IF
IDT12S60C
600 V
30 nC
12 A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like:
⢠CCM PFC
⢠Motor Drives
Type
IDT12S60C
Package
PG-TO220-2-2
Marking
D12S60C
Pin 1
C
Pin 2
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous forward current
RMS forward current
IF
I F,RMS
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C<140 °C
f =50 Hz
T C=25 °C, t p=10 ms
Repetitive peak forward current
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
Non-repetitive peak forward current
i²t value
I F,max
â«i 2dt
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
Repetitive peak reverse voltage
V RRM
Diode ruggedness dv/dt
dv/ dt VR=0â¦480V
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M3 and M3.5 screws
Value
12
18
98
49
410
48
600
50
115
-55 ... 175
60
Unit
A
A2s
V
V/ns
W
°C
Ncm
Rev. 2.1
page 1
2008-06-09
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