IDT02S60C Datasheet, PDF (1/7 Pages) Infineon Technologies AG – 2ndGeneration thinQ!TM SiC Schottky Diode

2^ndGeneration thinQ!^TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• No reverse recovery/ no forward recovery
• Temperature independent switching behavior
• High surge current capability
• Qualified according to JEDEC¹⁾ for target applications
• Breakdown voltage tested at 5mA²⁾
• Optimized for high temperature operation
Product Summary
V _DC
Q_c
I_F
IDT02S60C
600 V
3.2 nC
2A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
Type
IDT02S60C
Maximum ratings
Parameter
Package
PG-TO220-2-2
Marking
D02S60C
Pin 1
C
Symbol Conditions
Pin 2
A
Value
Continuous forward current
I_F
RMS forward current
I _F,RMS
Surge non-repetitive forward current, ^{I F,SM}
sine halfwave
T _C<120 °C
T _C<70 °C
f =50 Hz
T _C=25 °C, t _p=10 ms
T _C=150°C, t _p=10 ms
Repetitive peak forward current
I _F,RM
T _j=150 °C,
T _C=100 °C, D =0.1
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
I _F,max T _C=25 °C, t _p=10 µs
∫i ²dt
T _C=25 °C, t _p=10 ms
T _C=150°C, t _p=10 ms
V _RRM T _j=25 °C
dv/ dt V _R = 0….480V
P _tot
T _C=25 °C
T _j, T _stg
M3 and M3.5 screws
2
3
2.8
11.5
9.7
7.3
100
0.61
0.44
600
50
18
-55 ... 175
60
Rev. 2.0
page 1
Unit
A
A²s
V
V/ns
W
°C
Mcm
2007-04-25