IDP30E120 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

Preliminary data
IDP30E120
IDB30E120

 _{Fast Switching EmCon Diode}
Feature

1200 V EmCon^ technology

Fast recovery

Soft switching

Low reverse recovery charge

Low forward voltage

Easy paralleling
Product Summary
V_RRM
I_F
V_F
T_jmax
1200 V
30 A
1.65 V
150 °C
P-TO220-3.SMD
P-TO220-2-2.
Type
IDP30E120
IDB30E120
Package
Ordering Code
P-TO220-2-2. Q67040-S4390
P-TO220-3.SMD Q67040-S4383
Marking Pin 1
D30E120 C
D30E120 NC
PIN 2
A
C
PIN 3
-
A
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continous forward current
T_C=25°C
T_C=90°C
Surge non repetitive forward current
T_C=25°C, t_p=10 ms, sine halfwave
Maximum repetitive forward current
T_C=25°C, t_p limited by T_jmax, D=0.5
Power dissipation
T_C=25°C
T_C=90°C
Operating and storage temperature
Soldering temperature
1.6mm(0.063 in.) from case for 10s
V_RRM
I_F
I_FSM
I_FRM
P_tot
T_j , T_stg
T_S
Value
1200
50
30
102
76.5
138
66
-55...+150
260
Unit
V
A
W
°C
°C
Page 1
2001-12-12