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IDH12SG60C_13 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – 3rd Generation thinQ!TM SiC Schottky Diode | |||
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3rd Generation thinQ!TM SiC Schottky Diode
Features
⢠Revolutionary semiconductor material - Silicon Carbide
⢠Switching behavior benchmark
⢠No reverse recovery / No forward recovery
⢠Temperature independent switching behavior
⢠High surge current capability
⢠Pb-free lead plating; RoHS compliant
⢠Qualified according to JEDEC1) for target applications
⢠Breakdown voltage tested at 20mA2)
⢠Optimized for high temperature operation
⢠Lowest Figure of Merit QC/IF
Product Summary
VDC
QC
IF; TC< 130 °C
IDH12SG60C
600 V
19 nC
12 A
thinQ! 3G Diode designed for fast switching applications like:
⢠SMPS e.g.; CCM PFC
⢠Motor Drives; Solar Applications; UPS
Type
IDH12SG60C
Package
PG-TO220-2
Marking
D12G60C
Pin 1
C
Pin 2
A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
IF
T C<130 °C
Surge non-repetitive forward current, I F,SM
sine halfwave
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Non-repetitive peak forward current
i ²t value
I F,max
â«i 2dt
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Repetitive peak reverse voltage
V RRM T j=25 °C
Diode dv/dt ruggedness
dv/ dt VR= 0â¦.480 V
Power dissipation
P tot
T C=25 °C
Operating and storage temperature
Soldering temperature,
wavesoldering only allowed at leads
Mounting torque
T j, T stg
T sold
1.6mm (0.063 in.)
from case for 10s
M3 and M3.5 screws
Value
12
59
51
430
17
12
600
50
125
-55 ... 175
260
60
Unit
A
A2s
V
V/ns
W
°C
Ncm
Rev. 2.3
page 1
2013-02-11
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