IDH08S60C Datasheet, PDF (1/7 Pages) Infineon Technologies AG – 2ndGeneration thinQ!TM SiC Schottky Diode

2^ndGeneration thinQ!^TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Breakdown voltage tested at 5mA²⁾
Product Summary
V _DC
Q_c
I_F
IDH08S60C
600 V
19 nC
8A
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
Package
Marking
Pin 1
Pin 2
IDH08S60C
PG-TO220-2 D08S60C
C
A
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous forward current
RMS forward current
I_F
I _F,RMS
T _C<140 °C
f =50 Hz
Surge non-repetitive forward current,
sine halfwave
I _F,SM
T _C=25 °C, t _p=10 ms
8
A
12
59
Repetitive peak forward current
I _F,RM
T _j=150 °C,
T _C=100 °C, D =0.1
Non-repetitive peak forward current I _F,max T _C=25 °C, t _p=10 µs
i ²t value
∫i ²dt
T _C=25 °C, t _p=10 ms
Repetitive peak reverse voltage
V _RRM
Diode dv/dt ruggedness
dv/ dt V _R = 0….480V
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Mounting torque
Soldering temperature,
wavesoldering only allowed at leads
Rev. 2.0
T _sold
M3 and M3.5 screws
1.6mm (0.063 in.) from
case for 10s
page 1
32
264
17
600
50
75
-55 ... 175
60
260
A²s
V
V/ns
W
°C
Mcm
°C
2009-06-02