IDH04SG60C_12 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – 3rd Generation thinQ!TM SiC Schottky Diode

3^rd Generation thinQ!^TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Breakdown voltage tested at 20mA²⁾
• Optimized for high temperature operation
• Lowest Figure of Merit Q_C/I_F
Product Summary
V_DC
Q_C
I_F; T_C< 130 °C
IDH04SG60C
600 V
4.5 nC
4A
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
IDH04SG60C
Package
PG-TO220-2
Marking
D04G60C
Pin 1
C
Pin 2
A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
I_F
T _C<130 °C
Surge non-repetitive forward current, ^{I F,SM}
sine halfwave
T _C=25 °C, t _p=10 ms
T _C=150 °C, t _p=10 ms
Non-repetitive peak forward current
i ²t value
I _F,max
∫i ²dt
T _C=25 °C, t _p=10 µs
T _C=25 °C, t _p=10 ms
T _C=150 °C, t _p=10 ms
Repetitive peak reverse voltage
V _RRM T _j=25 °C
Diode dv/dt ruggedness
dv/ dt V_R= 0….480 V
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature
Soldering temperature,
wavesoldering only allowed at leads
Mounting torque
T _j, T _stg
T _sold
1.6mm (0.063 in.)
from case for 10s
M3 and M3.5 screws
Value
4
18
13.5
120
1.8
0.93
600
50
43
-55 ... 175
260
60
Unit
A
A²s
V
V/ns
W
°C
Ncm
Rev. 2.4
page 1
2012-12-12