IDD09E60G Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Low reverse recovery charge

Fast Switching Emitter Controlled Diode
Feature
• 600V Emitter Controlled technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
IDD09E60
Product Summary
V_RRM
600 V
I_F
V_F
T_jmax
9
A
1.5 V
175 °C
PG-TO252-3
Type
IDD09E60
Package
PG-TO252-3
Ordering Code Marking Pin 1 PIN 2,4 PIN 3
-
D09E60 ^NC
C
A
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
PPaararmameterter
SymSybmobl ol
R^Re^ep^pet^eit^tiv^ite^ivp^ee^pak^eare^kve^rers^ve^ev^ro^sl^etag^ve^oltage
C^Co^onⁿtin^tiuⁿo^ou^us^sfo^fr^ow^ra^wr^ad ^rc^dur^cre^un^rrt ^ent
T_TCC=₌₂2₅5_°_CC
T_TCC=₌₉9₀0_°_CC
S_Su_urg_re_geno_nn_or_nep_re_et_piti_ev_te_itf_io_vr_ew_fa_ord_rwc_aur_rr_den_ct_urrent
T_C = 25C, t_p = 10 ms, sine halfwave
M^Ta^Cx⁼i²m⁵u^°m^C, r^te^pp⁼e¹t⁰iti^mve^s,fo^srⁱⁿw^ear^hd^alc^fwur^ar^ve^ent
T^M_C ^a=^x2^im5C^um, t_p^rl^eim^pi^ete^td^itib^vy^et_j^f_,m^o_a^r_x^w, D^ar=^d0^c.5^urrent
P^To^Cw⁼e²r⁵d^°Cis^,s^ti^ppa^lit^mioⁱn^{ted by Tjmax, D=0.5}
T^P_C^o=^w2^e5^rC^dissipation
T_TCC=₌₂9₅0_°_CC
O_Tp_Ce₌r₉a₀ti_°n_Cg junction temperature
S_Oto_pra_eg_rae_tt_ie_nm_gp_ae_nra_dtu_sre_{torage temperature}
S_So_old_lder_ein_rg_int_gem_tep_mer_pa_etu_rr_ae_ture
1_r._e6_fm_lom_w(0_s._o0_l6_d3_ei_rn_in.)_gfr_,o_Mm_Sc_Las₃e for 10 s
V_{RRVMR R M}
I_F
I_F
I_{FSMI F S M}
I_FRM^I F R M
P_{totPt o t}
T_j
T_j , T^T_s^st_tg^g
T_{S TS}
VaVlualeue
60₆0₀₀
19¹.3^9.3
13¹³
40₄₀
29².5^9.5
57.7
57³.7^2.7
-₃40₂…_.7+175
-55^-5..⁵.+^...1⁺7¹5⁵⁰
26₂0₆₀
UUnint it
V^V
A
A
A
A
W^W
°C^°C
°C
Rev. 2.4
Page 1
2013­12­05