IDD04S60C Datasheet, PDF (1/7 Pages) Infineon Technologies AG – 2nd Generation thinQ SiC Schottky Diode

IDD04S60C
2^ndGeneration thinQ!^TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Breakdown voltage tested at 5mA²⁾
Product Summary
V _DC
Q_c
I_F
600 V
8 nC
4A
PG-TO252
3
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
1
2
Type
IDD04S60C
Package
PG-TO252
Marking
D04S60C
Pin 1
n.c.
Pin 2
A
Pin 3
C
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Continuous forward current
RMS forward current
Symbol Conditions
I_F
T _C<130 °C
I _F,RMS f =50 Hz
Surge non-repetitive forward current,
sine halfwave
I _F,SM
T _C=25 °C, t _p=10 ms
Value
4
5.6
32
Repetitive peak forward current
I _F,RM
T _j=150 °C,
T _C=100 °C, D =0.1
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
I _F,max T _C=25 °C, t _p=10 µs
∫i ²dt
T _C=25 °C, t _p=10 ms
V _RRM
dv/ dt V _R = 0….480V
P _tot
T _C=25 °C
T _j, T _stg
18
132
5.1
600
50
37
-55 ... 175
Unit
A
A²s
V
V/ns
W
°C
Rev. 2.0
page 1
2006-04-03