IDC51D120T6H Datasheet, PDF (1/4 Pages) Infineon Technologies AG – Diode EMCON 4 High Power Chip

IDC51D120T6H
Diode EMCON 4 High Power Chip
FEATURES:
• 1200V EMCON 4 technology
• soft, fast switching
This chip is used for:
• medium / high power modules
A
• low reverse recovery charge
• small temperature coefficient
C
Applications:
• medium / high power drives
Chip Type
IDC51D120T6H
V_R
I_F
1200V 100A
Die Size
7.00 x 7.30 mm²
Package
sawn on foil
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Pad metall
Backside metall
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
7.00 x 7.30
51.10 / 39.99
mm²
6.046 x 6.346
120
µm
150
mm
180
deg
277 pcs
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM PMD D CID T, L4673A, Edition 0.9, 26.06.07