IDC08S120E Datasheet, PDF (1/5 Pages) Infineon Technologies AG – 1200V thinQ!TM SiC Schottky Diode

1200V thinQ!^TM SiC Schottky Diode
IDC08S120E
Features:
Applications:
A
• Revolutionary Semiconductor Material - • Motor Drives / Solar Inverters
Silicon Carbide
• High Voltage CCM PFC
• Switching Behaviour Benchmark
• Switch Mode Power Supplies
C
• No Reverse Recovery / No Forward
• High Voltage Multipliers
Recovery
• Temperature Independent Switching
Behaviour
• Qualified According to JEDEC¹⁾ Based on
Target Applications
Chip Type
IDC08S120E
V_BR
I_F
Die Size
1200V 7.5A 2.012 x 2.012 mm²
Package
sawn on foil
Mechanical Parameters
Raster size
Anode pad size
Area total
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
2.012 x 2.012
1.476 x 1.476
mm²
4.05
362
µm
100
mm
1652
Photoimide
3200 nm Al
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, ≤ 350µm
∅ ≥ 0.3 mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009