IDC04S60CE Datasheet, PDF (1/4 Pages) Infineon Technologies AG – 2nd generation thinQ!TM SiC Schottky Diode

2^nd generation thinQ!^TM SiC Schottky Diode
IDC04S60CE
Features:
Applications:
A
• Revolutionary semiconductor material - • SMPS, PFC, snubber
Silicon Carbide
• Switching behavior benchmark
C
• No reverse recovery
• No temperature influence on the switching
behavior
• No forward recovery
• High surge current capability
Chip Type
IDC04S60CE
V_BR
I_F
Die Size
600V 4A 1.146 x 0.968 mm²
Package
sawn on foil
Mechanical Parameter
Raster size
Anode pad size
Area total
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Anode metal
Cathode metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
1.146x 0.968
0.909 x 0.731
mm²
1.11
355
µm
100
mm
6190
Photoimide
3200 nm Al
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, ≤ 350µm
∅ ≥ 0.3 mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009