FZ800R12KL4C Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Technische Information / Technical Information

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ800R12KL4C
1200VIGBTModulmitlowlossIGBTder2.tenGenerationundsofterEmitterControlledDiode
1200VIGBTModulewithlowlossIGBTof2ndgenerationandsoftEmitterControlledDiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Tvj = 125°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 150
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1200
1200
800
1300
1600
5,70
+/-20
V

A
A
A
 kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 800 A, VGE = 15 V
IC = 800 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 32,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 800 A, VCE = 600 V
VGE = ±15 V
RGon = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 800 A, VCE = 600 V
VGE = ±15 V
RGon = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 800 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 800 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 800 A, VCE = 600 V, LS = 70 nH
VGE = ±15 V
RGon = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 800 A, VCE = 600 V, LS = 70 nH
VGE = ±15 V
RGoff = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Kurzschlußverhalten
SCdata
VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
2,10 2,60 V
2,40 2,90 V
4,5 5,5 6,5 V
 8,60  µC
 1,3  Ω
 56,0  nF
 3,60  nF

 5,0 mA

 400 nA
0,27
µs
 0,29  µs
0,15
µs
 0,16  µs
0,90
µs
 1,00  µs
0,09
µs
 0,10  µs
mJ
 120  mJ
mJ
 125  mJ
 ₆₀₀₀ 
A

 22,0 K/kW
 9,00
K/kW
-40  125 °C
preparedby:DTS
approvedby:TS
dateofpublication:2013-10-02
revision:3.1
1