FS225R12KE3 Datasheet, PDF (1/9 Pages) eupec GmbH – IGBT-Modules

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FS225R12KE3
-EconoPACK™+ModulmitTrench/FeldstopIGBT3undHighEfficiencyDiode
-EconoPACK™+withtrench/fieldstopIGBT3andEmConHighEfficiencydiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 80°C, Tvj = 150°C
TC = 25°C, Tvj = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj = 150°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1200
225
325
450
1150
+/-20
V

A
A
A
W
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 225 A, VGE = 15 V
IC = 225 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 9,00 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 225 A, VCE = 600 V
VGE = ±15 V
RGon = 3,3 Ω
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 225 A, VCE = 600 V
VGE = ±15 V
RGon = 3,3 Ω
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 225 A, VCE = 600 V
VGE = ±15 V
RGoff = 3,3 Ω
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 225 A, VCE = 600 V
VGE = ±15 V
RGoff = 3,3 Ω
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 225 A, VCE = 600 V, LS = 80 nH
VGE = ±15 V
RGon = 3,3 Ω
Tvj = 25°C
Tvj = 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 225 A, VCE = 600 V, LS = 80 nH
VGE = ±15 V
RGoff = 3,3 Ω
Tvj = 25°C
Tvj = 125°C
Kurzschlußverhalten
SCdata
VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
min. typ. max.
1,70 2,15 V
2,00
V
5,0 5,8 6,5 V
 2,10  µC
 3,3  Ω
 16,0  nF
 0,75  nF

 5,0 mA

 400 nA
0,25
µs
 0,30  µs
0,09
µs
 0,10  µs
0,55
µs
 0,65  µs
0,13
µs
 0,16  µs
mJ
 15,0  mJ
mJ
 36,0  mJ
 ₉₀₀ 
A

 0,11 K/W
 0,047
K/W
preparedby:MB
approvedby:WR
dateofpublication:2013-02-28
revision:3.1
1