|
FP25R12W2T4 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – IGBT-Wechselrichter / IGBT-inverter | |||
|
Technische Information / technical information
IGBT-Module
IGBT-modules
FP25R12W2T4
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÃà = 25°C
Kollektor-Dauergleichstrom
DC-collector current
Tâ = 100°C, TÃà = 175°C
Tâ = 25°C, TÃà = 175°C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms
Gesamt-Verlustleistung
total power dissipation
Tâ = 25°C, TÃà = 175°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Vorläufige Daten / preliminary data
Vâ Š»
1200
V
Iâ ÃÃÃ
25
A
Iâ
39
A
Iâ ç¢
50
A
PÃÃÃ
175
W
Vâ¢Å »
+/-20
V
Charakteristische Werte / characteristic values
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Iâ = 25 A, Vâ¢Å = 15 V
Iâ = 25 A, Vâ¢Å = 15 V
Iâ = 25 A, Vâ¢Å = 15 V
TÃà = 25°C
TÃà = 125°C
TÃà = 150°C
Gate-Schwellenspannung
gate threshold voltage
Iâ = 0,80 mA, Vâ Å = Vâ¢Å , TÃà = 25°C
Gateladung
gate charge
Vâ¢Å = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
TÃà = 25°C
Eingangskapazität
input capacitance
f = 1 MHz, TÃà = 25°C, Vâ Å = 25 V, Vâ¢Å = 0 V
Rückwirkungskapazität
reverse transfer capacitance
f = 1 MHz, TÃà = 25°C, Vâ Å = 25 V, Vâ¢Å = 0 V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Vâ Å = 1200 V, Vâ¢Å = 0 V, TÃà = 25°C
Gate-Emitter Reststrom
gate-emitter leakage current
Vâ Å = 0 V, Vâ¢Å = 20 V, TÃà = 25°C
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
Iâ = 25 A, Vâ Å = 600 V
Vâ¢Å = ±15 V
Râ¢Ãà = 20 Ã
TÃà = 25°C
TÃà = 125°C
TÃà = 150°C
Anstiegszeit (induktive Last)
rise time (inductive load)
Iâ = 25 A, Vâ Å = 600 V
Vâ¢Å = ±15 V
Râ¢Ãà = 20 Ã
TÃà = 25°C
TÃà = 125°C
TÃà = 150°C
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
Iâ = 25 A, Vâ Å = 600 V
Vâ¢Å = ±15 V
Râ¢ÃÃà = 20 Ã
TÃà = 25°C
TÃà = 125°C
TÃà = 150°C
Fallzeit (induktive Last)
fall time (inductive load)
Iâ = 25 A, Vâ Å = 600 V
Vâ¢Å = ±15 V
Râ¢ÃÃà = 20 Ã
TÃà = 25°C
TÃà = 125°C
TÃà = 150°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Iâ = 25 A, Vâ Å = 600 V, L» = 35 nH
TÃà = 25°C
Vâ¢Å = ±15 V, di/dt = 1700 A/µs (TÃÃ=150°C) TÃà = 125°C
Râ¢Ãà = 20 Ã
TÃà = 150°C
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Iâ = 25 A, Vâ Å = 600 V, L» = 35 nH
TÃà = 25°C
Vâ¢Å = ±15 V, du/dt = 3600 V/µs (TÃÃ=150°C) TÃà = 125°C
Râ¢ÃÃà = 20 Ã
TÃà = 150°C
Kurzschlussverhalten
SC data
Vâ¢Å ù 15 V, Vâ â = 900 V
Vâ Å ÃÃà = Vâ Š» -LÃâ Š·di/dt
t« ù 10 µs, TÃà = 150°C
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT / per IGBT
Ãbergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÃÃÃþ = 1 W/(m·K) / ðÃÃþÃÃþ = 1 W/(m·K)
Vâ Å ÃÃÃ
Vâ¢Å ÃÃ
Qâ¢
Râ¢ÃÃÃ
CÃþÃ
CÃþÃ
Iâ Š»
Iâ¢Å »
tà ÃÃ
tÃ
tà ÃÃÃ
tÃ
EÃÃ
EÃÃÃ
Iȉ
RÃÃÅâ
RÃÃâ â¢
min. typ. max.
1,85 2,25 V
2,15
V
2,25
V
5,2 5,8 6,4 V
0,20
µC
0,0
Ã
1,45
nF
0,05
nF
1,0 mA
400 nA
0,026
µs
0,026
µs
0,026
µs
0,016
µs
0,02
µs
0,021
µs
0,19
µs
0,28
µs
0,30
µs
0,18
µs
0,21
µs
0,22
µs
1,60
mJ
2,40
mJ
2,60
mJ
1,45
mJ
2,15
mJ
2,35
mJ
90
A
0,75 0,85 K/W
0,70
K/W
prepared by: DK
approved by: MB
date of publication: 2009-07-23
revision: 2.2
1
|
▷ |