FP210L100-22 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – Differential Magnetoresistive Sensor

Differential Magnetoresistive Sensor
Version 2.0
Features
• High operating
temperature
• High output voltage
• Robust cylindrical
housing
• Biasing magnet build in
• Signal amplitude
independent of speed
• Easily connectable
Typical applications
• Detection of speed
• Detection of position
• Detection of sense of
rotation
• Angle encoder
• Linear position sensing
Dimensions in mm
FP 210 L 100-22
Type
FP 210 L 100-22
Ordering Code
Q65210-L100-W4
The differential magnetoresistive sensor FP 210 L 100-22 consists of two series coupled
L-type InSb/NiSb semiconductor resistors. The resistance value of the MRs, which are
mounted onto an insulated ferrite substrate, can be magnetically controlled. The sensor
is encapsulated in a plastic package with three in-line contacts extending from the base.
The basic resistance of the total system in the unbiased state is 2×100 Ω. A permanent
magnet which supplies a biasing magnetic field is built into the housing.
Data Sheet
1
2000-07-01