FP10R12W1T4_B11 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – IGBT-Wechselrichter / IGBT-inverter

Technische Information / technical information
IGBT-Module
IGBT-modules
FP10R12W1T4_B11
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
Kollektor-Dauergleichstrom
DC-collector current
T† = 100°C, TÝÎ = 175°C
T† = 25°C, TÝÎ = 175°C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms
Gesamt-Verlustleistung
total power dissipation
T† = 25°C, TÝÎ = 175°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Vorläufige Daten / preliminary data
V†Š»
1200
V
I† ÒÓÑ
10
A
I†
20
A
I†ç¢
20
A
PÚÓÚ
105
W
V•Š»
+/-20
V
Charakteristische Werte / characteristic values
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 10 A, V•Š = 15 V
I† = 10 A, V•Š = 15 V
I† = 10 A, V•Š = 15 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Gate-Schwellenspannung
gate threshold voltage
I† = 0,30 mA, V†Š = V•Š, TÝÎ = 25°C
Gateladung
gate charge
V•Š = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
Rückwirkungskapazität
reverse transfer capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
Gate-Emitter Reststrom
gate-emitter leakage current
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 47 Â
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 47 Â
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 47 Â
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Fallzeit (induktive Last)
fall time (inductive load)
I† = 10 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 47 Â
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 10 A, V†Š = 600 V, L» = 50 nH
V•Š = ±15 V, di/dt = 500 A/µs (TÝÎ=150°C)
R•ÓÒ = 47 Â
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 10 A, V†Š = 600 V, L» = 50 nH
TÝÎ = 25°C
V•Š = ±15 V, du/dt = 3500 V/µs (TÝÎ=150°C) TÝÎ = 125°C
R•ÓËË = 47 Â
TÝÎ = 150°C
Kurzschlussverhalten
SC data
V•Š ù 15 V, V†† = 800 V
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
t« ù 10 µs, TÝÎ = 150°C
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT / per IGBT
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)
V†Š ÙÈÚ
V•ŠÚÌ
Q•
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
tÁ ÓÒ
tØ
tÁ ÓËË
tË
EÓÒ
EÓËË
IȠ
RÚÌœ†
RÚ̆™
min. typ. max.
1,85 2,25 V
2,15
V
2,25
V
5,2 5,8 6,4 V
0,09
µC
0,0
Â
0,60
nF
0,024
nF
1,0 mA
400 nA
0,045
µs
0,045
µs
0,045
µs
0,044
µs
0,061
µs
0,063
µs
0,18
µs
0,245
µs
0,275
µs
0,165
µs
0,215
µs
0,225
µs
0,90
mJ
1,35
mJ
1,55
mJ
0,55
mJ
0,80
mJ
0,87
mJ
35
A
1,25 1,40 K/W
1,15
K/W
prepared by: DK
approved by: MB
date of publication: 2009-10-19
revision: 2.0
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