FOA11002A1 Datasheet, PDF (1/2 Pages) Infineon Technologies AG – Semiconductor Solutions for High Speed Communi cation and Fiber Optic Applications

PRODUCT BRIEF
Semiconductor Solutions for
High Speed Communication
and Fiber Optic Applications
The FOA11002A1 is the industry's lowest power
consuming STM64/OC-192 Transimpedance Amplifier
for SDH/SONET systems in Silicon Germanium technol-
ogy. This new device is a key component for future high
speed optical communication systems for regional, met-
ropolitan and backbone transport data networks at the
highest speeds up to 10.7 Gbit/s over one single fiber.
It is a member of the complete 10 Gbit/s chipset in the
Silicon Germanium technology.
Features
s Input sensitivity: -18.0 dBm
electrical at BER = 10^-12
s Transimpedance: 6 kΩ
s Overload: 0 dBm electrical
s Single power supply: +5 V
s Low power consumption:
170 mW
s Internal DC compensation
loop increases dynamic
range
s Internal bias generation for
PIN photo diode including
low-pass filter
s Operates with PIN photo
diode or APD
s Monitor output for mirrored
photodiode current
Packing
F OA 1 1 0 02 A 1 ^{Typical Applications}
s Internal bias generation for
s Fiber optics telecom and
datacom applications
PIN photo diode including
low-pass filter
s SONET/SDH OC-192/STM-64
with and without FEC
s Operates with PIN photo
diode or APD
s Preamplifier modules
s Monitor output for mirrored
photodiode current
s Optical receiver modules
s Few external components
necessary
Main Advantages
s Data rate from 9.95 Gbit to
10.7 Gbit/s up to 10.7 Gbit/s
Input sensitivity:
- 18.0 dBm at BER = 10^-12
s Small chip size of
0.97 x 0.97 mm
(available as bare die)
s Transimpedance: 6 kΩ
s High overload: 1.5 mA pp
maximum input current
s Single power supply: +5 V
s Low power consumption:
170 mW
s Internal DC compensation
loop increases dynamic
range
Type
Sales Code
Package
TIA
FOA11002A
Bare die
FOA11002A1
Transimpedance Amplifier
TIA 9.95 - 10.7 Gbit/s, 5.0 V
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