FF800R17KF6C-B2 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – IGBT-Wechselrichter / IGBT-inverter

TechnischeInformation/technicalinformation
FF800R17KF6C_B2
1700VIGBTModulmitlowlossIGBTder2.tenGenerationundsofterEmConDiode
1700VIGBTModulewithlowlossIGBTof2ndgenerationandsoftEmConDiode
IGBT-Wechselrichter/IGBT-inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Tvj = 125°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 80°C, Tvj = 150°C
TC = 25°C, Tvj = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj = 150°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VorläufigeDaten/Preliminarydata
VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
1700
1700
800
1300
1600
6,25
+/- 20
V

A
A
A
 kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 800 A, VGE = 15 V
IC = 800 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 65,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 1700 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 800 A, VCE = 900 V
VGE = ±15 V
RGon = 1,2 Ω
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 800 A, VCE = 900 V
VGE = ±15 V
RGon = 1,2 Ω
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 800 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 800 A, VCE = 900 V
VGE = ±15 V
RGoff = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 800 A, VCE = 900 V, LS = 60 nH
VGE = ±15 V
RGon = 1,2 Ω
Tvj = 25°C
Tvj = 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 800 A, VCE = 900 V, LS = 60 nH
VGE = ±15 V
RGoff = 1,8 Ω
Tvj = 25°C
Tvj = 125°C
Kurzschlußverhalten
SCdata
VGE ≤ 15 V, VCC = 1000 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
pro IGBT / per IGBT
Wärmewiderstand,GehäusebisKühlkörper pro IGBT / per IGBT
Thermalresistance,casetoheatsink
λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)
VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
min. typ. max.
2,60 3,10 V
3,10 3,60 V
4,5 5,5 6,5 V
 9,60  µC
 1,3  Ω
 52,0  nF
 2,70  nF
 0,02 1,5 mA

 400 nA
0,40
µs
 0,40  µs
0,14
µs
 0,14  µs
1,10
µs
 1,10  µs
0,13
µs
 0,14  µs
mJ
 290  mJ
mJ
 335  mJ
 ₃₂₀₀ 
A

 20,0 K/kW
 25,0
K/kW
preparedby:WB
approvedby:PL
dateofpublication:2012-09-27
revision:2.1
1