FF400R33KF2C Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Technische Information

TechnischeInformation/technicalinformation
FF400R33KF2C
IGBT-Wechselrichter/IGBT-inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Tvj = -25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 80°C, Tvj = 150°C
TC = 25°C, Tvj = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj = 150°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VorläufigeDaten/Preliminarydata
VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
3300
3300
400
660
800
4,80
+/-20
V

A
A
A
 kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 400 A, VGE = 15 V
IC = 400 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 40,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V, VCE = 1800V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 3300 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 400 A, VCE = 1800 V
VGE = ±15 V
RGon = 2,7 Ω, CGE = 68,0 nF
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 400 A, VCE = 1800 V
VGE = ±15 V
RGon = 2,7 Ω, CGE = 68,0 nF
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 400 A, VCE = 1800 V
VGE = ±15 V
RGoff = 3,6 Ω, CGE = 68,0 nF
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 400 A, VCE = 1800 V
VGE = ±15 V
RGoff = 3,6 Ω, CGE = 68,0 nF
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 400 A, VCE = 1800 V, LS = 60 nH
VGE = ±15 V
RGon = 2,7 Ω, CGE = 68,0 nF
Tvj = 25°C
Tvj = 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 400 A, VCE = 1800 V, LS = 60 nH
VGE = ±15 V
RGoff = 3,6 Ω, CGE = 68,0 nF
Tvj = 25°C
Tvj = 125°C
Kurzschlußverhalten
SCdata
VGE ≤ 15 V, VCC = 2500 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
pro IGBT / per IGBT
Wärmewiderstand,GehäusebisKühlkörper pro IGBT / per IGBT
Thermalresistance,casetoheatsink
λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)
VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
min. typ. max.
3,40 4,25 V
4,30 5,00 V
4,2 5,1 6,0 V
 8,00  µC
 1,3  Ω
 50,0  nF
 2,70  nF

 5,0 mA

 400 nA
0,28
µs
 0,28  µs
0,18
µs
 0,20  µs
1,55
µs
 1,70  µs
0,20
µs
 0,20  µs
470
mJ
 730  mJ
430
mJ
 510  mJ
 ₂₀₀₀ 
A

 26,0 K/kW
 18,0
K/kW
preparedby:SB
approvedby:DTS
dateofpublication:2013-02-11
revision:2.1
1