D690S Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Schnelle Diode Fast Diode

S
Schnelle Diode
Fast Diode
Datenblatt / Data sheet
D690S
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Peri^Kod^eisⁿcⁿhe^daS^tp^eitzⁿensperrspannung
T_vj = -25°C... T_{vj max}
repe_Etitiv_le_ep_kea_tk_rre_iv_ser_cse_hvo_eltage_Es _igenschaften
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
T_C = 100 °C
Dauergrenzstrom
average on-state current
T_C = 55 °C, θ = 180°sin, t_P = 10 ms
Durchlaßstrom-Effektivwert
RMS on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
T_vj = 25°C, t_P = 10 ms
T_vj = T_{vj max} , t_P = 10 ms
T_vj = 25°C, t_P = 1 ms
T_vj = T_{vj max} , t_P = 1 ms
T_vj = 25°C, t_P = 10 ms
T_vj = T_{vj max} , t_P = 10 ms
T_vj = 25°C, t_P = 1 ms
T_vj = T_{vj max} , t_P = 1 ms
V_RRM
I_FRMSM
2000
2200
I_FAVM
I_FAVM
I_FRMS
I_FSM
I²t
2400 V
2600 V
1600 A
690 A
870 A
1360 A
14000 A
11500 A
33400 A
27500 A
980 10³A²s
661 10³A²s
558 10³A²s
378 10³A²s
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie 200 A ≤ i_F ≤ 3000 A
on-state characteristic
v _F = A + B ⋅ i_F + C ⋅ ln ( i_F + 1 ) + D ⋅ i_F
Spitzenwert der Durchlaßverzögerungsspannung
peak value of forward recovery voltage
Durchlaßverzögerungszeit
forward recovery time
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Sperrverzögerungszeit
reverse recovery time
T_vj = T_{vj max} , i_F = 3000A
v_F
max.
2,7 ^V
T_vj = T_{vj max}
V_(TO)
1,0 V
T_vj = T_{vj max}
r_T
0,5 mΩ
T_vj = T_{vj max}
DIN IEC 747-2
T_vj = T_{vj max}, di_F/dt = 50A/µs, v_R = 0V
DIN IEC 747-2, Methode / Method II
T_vj = T_{vj max,} i_FM = 3000A
di_F/dt = 50A/µs, v_R = 0V
T_vj = 25°C , v_R = v_RRM
T_vj = T_{vj max} , v_R = V_RRM
A=
B=
C=
D=
V_FRM
-1,575E-01
6,000E-04
2,421E-01
-1,582E-02
typ. 16,5 V
t_fr
typ.
6,2 µs
i_R
max.
25 mA
max.
250 mA
DIN IEC 747-2, T_vj = T_{vj max}
I_RM
i_FM = 1020A, -di_F/dt = 50A/µs
v_R ≤ 0,5V_RRM, v_RM = 0,8V_RRM
DIN IEC 747-2, T_vj = T_{vj max}
Q_r
i_FM = 1020A, -di_F/dt = 50A/µs
v_R ≤ 0,5V_RRM, v_RM = 0,8V_RRM
DIN IEC 747-2, T_vj = T_{vj max}
t_rr
i_FM = 1020A, -di_F/dt = 50/µs
v_R ≤ 0,5V_RRM, v_RM = 0,8V_RRM
155 A
970 µAs
9 µs
prepared by: H.Sandmann
approved by: M.Leifeld
IFBIP _SDeAitEe C/ _{p/a2g0e0A8-0194-/9125,} H.Sandmann
date of publication:
revision:
2008-09-15
3.0
A 48/08
Seite/page
1/6