D650S Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Schnelle Diode Fast Diode

S
Schnelle Diode
Fast Diode
Datenblatt / Data sheet
D650S
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Peri^Kod^eisⁿcⁿhe^daS^tp^eitzⁿensperrspannung
T_vj = -40°C... T_{vj max}
repe_Etitiv_le_ep_kea_tk_rre_iv_ser_cse_hvo_eltage_Es _igenschaften
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
T_C = 100°C
Dauergrenzstrom
average on-state current
T_C = 55 °C, θ = 180°sin, t_P = 10 ms
Durchlaßstrom-Effektivwert
RMS on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
T_vj = +25°C, t_P = 10 ms
T_vj = T_{vj max} , t_P = 10 ms
T_vj = +25°C, t_P = 10 ms
T_vj = T_{vj max} , t_P = 10 ms
V_RRM
I_FRMSM
I_FAVM
I_FAVM
I_FRMS
I_FSM
I²t
1200 V
1400 V
1400 A
620 A
960 A
1510 A
12200 A
10100 ^A
744,2 A²s
510,05 ^A²s
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Spitzenwert der Durchlaßverzögerungsspannung
peak value of forward recovery voltage
Durchlaßverzögerungszeit
forward recovery time
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Sperrverzögerungszeit
reverse recovery time
T_vj = T_{vj max} , i_F = 2700 A
T_vj = T_{vj max}
T_vj = T_{vj max}
IEC 747-2
T_vj = T_{vj max}, i_FM = 2700 A,
di_F/dt = 50 A/µs
IEC 747-2, Methode / Method II
i_FM = di_F/dt · t_fr = 2700 A
T_vj = T_{vj max}, di_F/dt = 50 A/µs
T_vj = +25°C
T_vj = T_{vj max} , v_R = V_RRM
IEC 747-2, T_vj = T_{vj max}
i_FM = 900A, -di_F/dt = 50 A/µs
v_R ≈ 0,5V_RRM, v_RM = 0,8V_RRM
IEC 747-2, T_vj = T_{vj max}
i_FM = 900 A, -di_F/dt = 50 A/µs
v_R ≈ 0,5V_RRM, v_RM = 0,8V_RRM
IEC 747-2, T_vj = T_{vj max}
i_FM = 900 A, -di_F/dt = 50 A/µs
v_R ≈ 0,5V_RRM, v_RM = 0,8V_RRM
v_F
V_(TO)
r_T
V_FRM
max.
2,25 ^V
1,0 V
0,45 mΩ
2,9 V
t_fr
5 µs
i_R
max.
20 mA
200 mA
I_RM
122 A
Q_r
370 µAs
t_rr
5,3 µs
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication:
revision:
2009-03-16
1.0
IFBIP _SDeAitEe C/ _{p/a2g0e0A9-0134-/9126,} H.Sandmann
A 15/09
Seite/page
1/6