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BUZ349 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |||
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SIPMOS ® Power Transistor
⢠N channel
⢠Enhancement mode
⢠Avalanche-rated
BUZ 349
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 349
VDS
100 V
ID
32 A
RDS(on)
0.06 â¦
Maximum Ratings
Parameter
Continuous drain current
TC = 27 ËC
Pulsed drain current
TC = 25 ËC
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 32 A, VDD = 25 V, RGS = 25 â¦
L = 322 µH, Tj = 25 ËC
Gate source voltage
Power dissipation
TC = 25 ËC
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S3113-A2
Values
Unit
A
32
128
32
15
mJ
220
± 20
V
W
125
-55 ... + 150 ËC
-55 ... + 150
â¤1
K/W
75
E
55 / 150 / 56
Data Sheet
1
05.99
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