BUZ111S Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

SIPMOS® Power Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• dv/dt rated
• 175˚C operating temperature
BUZ 111S
V_DS
55 V
R_DS(on) 0.008 Ω
I_D
80 A
Type
BUZ111S
BUZ111S E3045A
BUZ111S E3045
Package Ordering Code Packaging
P-TO220-3-1 Q67040-S4003-A2 Tube
P-TO263-3-2 Q67040-S4003-A6 Tape and Reel
P-TO263-3-2 Q67040-S4003-A5 Tube
Pin 1 Pin 2 Pin 3
G
D
S
Maximum Ratings, at T_j = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 ˚C, ¹⁾
T_C = 100 ˚C
Pulsed drain current
T_C = 25 ˚C
Avalanche energy, single pulse
I_D = 80 A, V_DD = 25 V, R_GS = 25 Ω
IDpulse
E_AS
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
E_AR
dv/dt
I_S = 80 A, V_DS = 40 V, di/dt = 200 A/µs,
T_jmax = 175 ˚C
Gate source voltage
Power dissipation
T_C = 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
80
80
320
700
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
˚C
Data Sheet
1
05.99