BUZ110S Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

BUZ 110S
SIPMOS Power Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• dv/dt rated
• 175 ˚C operating temperature
V_DS
55 V
R_DS(on) 0.01 Ω
I_D
80 A
Type
BUZ110S
BUZ110S E3045A
BUZ110S E3045
Package Ordering Code Packaging
P-TO220-3-1 Q67040-S4005-A2 Tube
P-TO263-3-2 Q67040-S4005-A6 Tape and Reel
P-TO263-3-2 Q67040-S4005-A5 Tube
Pin 1 Pin 2 Pin 3
G
D
S
Maximum Ratings, at T_j = 25 ˚C unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 ˚C, limited by bond wire
T_C = 100˚C
Pulsed drain current
IDpulse
T_C = 25 ˚C
Avalanche energy, single pulse
E_AS
I_D = 80 A, V_DD = 25 V, R_GS = 25 Ω
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
E_AR
dv/dt
I_S = 80 A, V_DS = 40 V, di/dt = 200 A/µs,
T_jmax = 175 ˚C
Gate source voltage
V_GS
Power dissipation
P_tot
T_C = 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Value
80
66
320
460
20
6
±20
200
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
˚C
Data Book
1
05.99