BTS949_00 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Smart Lowside Power Switch

HITFET^=BTS 949
Smart Lowside Power Switch
Features
Product Summary
• Logic Level Input
Drain source voltage
• Input Protection (ESD)
On-state resistance
•=Thermal shutdown with latch
Current limit
• Overload protection
Nominal load current
• Short circuit protection
Clamping energy
• Overvoltage protection
• Current limitation
• Maximum current adjustable with external resistor
• Current sense
• Status feedback with external input resistor
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
V_DS
R_DS(on)
I _D(lim)
I _D(ISO)
E_AS
60 V
18 mΩ
9.5 A
19 A
6000 mJ
1
5
VPT05166
1
5
VPT05165
General Description
N channel vertical power FET in Smart SIPMOS^ chip on chip tech-
nology. Fully protected by embedded protected functions.
Vbb
+
2
LOAD
M
NC
1
IN
dv/dt
lim ita tio n
Current
lim ita tio n
Overvoltage
protection
Drain
3
4 ^CC
RCC
ESD
Overload
protection
Over-
temperature
protection
SShhoorrtt cciirrccuuiitt
pprrootteeccttiioonn
Source
5
H IT F E T
Page 1
07.06.2000