BTS7904S Datasheet, PDF (1/13 Pages) Infineon Technologies AG – OptiMOS -T PN Half Bridge

OptiMOS^® -T PN Half Bridge
Features
• Dual p- and n-channel MOSFET
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
• Ultra low R _DS(on)
• 150 °C operating temperature
Product Summary
V _DS
R _DS(on),max
I_D
BTS7904S
P
N
-30 55 V
13 12 mΩ
-40 40 A
PG-TO220-5-13
Type
BTS7904S
Package
PG-TO220-5-13
Marking
7904S
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current¹⁾
Pulsed drain current²⁾
Avalanche energy, single pulse²⁾
Avalanche current, single pulse
Gate source voltage
Power dissipation²⁾
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I_D
T _C=25 °C
T _C=100 °C
I _D,pulse T _C=25 °C
E _AS
I _D=±20 A
I_AS
V _GS
P _tot
T _C=25 °C
T _j, T _stg
Value
Unit
P
N
-40
40
A
-40
40
-160
160
350
200 mJ
-40
40
A
-16 / +5 _{+16 / -16}³⁾ V
96
69
W
-55 ... 150
°C
55/150/56
1.0
page 1
2008-07-08